NORMAL CONTACT STIFFNESS OF THE ELLIPTIC AREA BETWEEN TWO ASPERITIES

A new expression for contact deformation is given, and the normal contact stiffness between single asperities is derived according to Hooke’s law. A contact model between two ellipsoidal asperities is simulated by the FE method, the result compared with the theoretical solution. It is found that the curves of the normal contact stiffness versus the included angle in the principal curvature direction show similar trends and evolve as a cosine feature. The effects of the parameters on normal contact stiffness are found to show that normal contact stiffness increases and reaches the upper limit gradually with an increase in these parameters.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

Luminescent Thin Films Enabled by CsPbX3 (X=Cl,Br, I) Precursor Solution

Inorganic cesium lead halide perovskite nanocrystals are candidates for lighting and display materials due to their outstanding optoelectronic properties. However, the dissolution issue of perovskite nanocrystals in polar solvents remains a challenge for practical applications. Herein, we present a newly designed one-step spin-coating strategy to prepare a novel multicolor-tunable CsPbX₃ (X=Cl, Br, I) nanocrystal film, where the CsPbX₃ precursor solution was formed by dissolving PbO, Cs₂CO₃, and CH₃NH₃X into the ionic liquid n-butylammonium butyrate. The as-designed CsPbX₃ nanocrystal films show high color purity with a narrow emission width. Also, the blue CsPb(Cl/Br)₃ film demonstrates an absolute photoluminescence quantum yields (PLQY) of 15.6 %, which is higher than 11.7 % of green CsPbBr₃ and 8.3 % of red CsPb(Br/I)₃ film. This study develops an effective approach to preparing CsPbX₃ nanocrystal thin films, opening a new avenue to design perovskite nanocrystals-based devices for lighting and display applications.     

Enantioselective Synthesis of Chiral Carboxylic Acids from Alkynes and Formic Acid by Nickel-Catalyzed Cascade Reactions: Facile Synthesis of Profens

We report a stereoselective conversion of terminal alkynes to α-chiral carboxylic acids using a nickel-catalyzed domino hydrocarboxylation-transfer hydrogenation reaction. A simple nickel/BenzP* catalyst displayed high activity in both steps of regioselective hydrocarboxylation of alkynes and subsequent asymmetric transfer hydrogenation. The reaction was successfully applied in enantioselective preparation of three nonsteroidal anti-inflammatory profens (>90 % ees) and the chiral fragment of AZD2716.     

低温固相反应法制备钠快离子导体NaZr2(PO4)3粉体

为了进一步促进钠快离子导体磷酸锆钠(NaZr2(PO4)3)粉体的实际应用,本文提出了一种以氧氯化锆(ZrOCl2·8H2O)和二水磷酸二氢钠(NaH2PO4·2H2O)为原料的低温固相反应法制备NaZr2(PO4)3粉体.通过XRD,SEM和Raman等测试手段系统研究了磷酸盐用量对制备磷酸锆钠粉体的影响.结果 表明:采用超量的磷酸盐有利于纯相磷酸锆钠粉体的合成.同时当锆盐与磷酸盐的摩尔比为2∶5.4时,能够合成平均粒径1μm,尺寸均匀,分散性良好的磷酸锆钠粉体.研究发现研磨时发生的固相反应对磷酸锆钠粉体的制备有重要作用,一方面促进了无定型磷酸锆钠的产生,有利于磷酸锆钠晶体形成;另一方面原位生成的氯化钠为晶体的生长提供了良好的液相环境,促进了磷酸锆钠粉体的低温合成.该工作为磷酸锆钠粉体的大规模生产提供了一条简单有效的方法.     

真空中金属丝电爆炸数值模拟研究

利用金属丝电爆炸物理数学模型对电爆炸物理过程开展了数值模拟，研究了不同直径铝丝电爆炸特性，进一步分析了金属丝内沉积能量、电压击穿时刻、电压峰值随金属丝直径的变化规律，并与相关实验数据作了对比。     

高质量氧化镓单晶及肖特基二极管的制备

本文采用导模法生长技术,成功制备了高质量掺Si氧化镓(β-Ga₂O₃)单晶,掺杂浓度为2×10¹⁸ cm^-3.晶体呈现淡蓝色,通过劳厄衍射、阴极荧光(CL)及拉曼测试对晶体的基本性质进行了表征,结果表明晶体质量良好.紫外透过光谱证明该晶体的禁带宽度约为4.71 eV.此外,在剥离衬底上,采用电子束蒸发、光刻和显影技术制备了垂直结构的肖特基二极管,平均击穿场强EAva为2.1 MV/cm,导通电阻3 mΩ·cm²,展示了优异性能.